.IP CORE // SILICON READYAEC-Q100 Qualified

IP for excellent design and memory performance.

NSCore provides high-performance non-volatile memory IP solutions. Our zero-mask-adder technology ensures efficient silicon integration for your next-generation semiconductor projects.

Zero-mask-adder NVM IP
High-density memory cells
Automotive grade reliability
Advanced CMOS integration
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IP STATUS
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> Target: Zero-Mask-Adder NVM IP
> Process: Advanced CMOS Nodes
> State: Silicon Proven & Ready

DENSITY

HIGH

Optimized

RELIABILITY

AEC-Q100

Automotive Grade

Universal IP Support

CMOS, FinFET, FD-SOI

NVM
DOWNLOAD IP SPECS
Memory Retention

Non-Volatile

Zero-mask-adder IP

Logic Economy

High Density

Optimized silicon area

Process Nodes

Multi-Node

Legacy to advanced CMOS

Qualification

AEC-Q100

Automotive grade ready

IP SOLUTIONS

Memory IP Cores

Benchmark NVM IP solutions for zero-mask-adder silicon architecture.

AEC-Q100
View All IP

Zero-Mask

Cost-efficient design

Automotive

Grade 0 qualified

High-End

150°C retention

Silicon IP Portfolio

Memory IP Categories

Explore our high-performance non-volatile memory IP solutions, engineered for reliability and scalability across diverse silicon nodes.

IP DATASET v4.2

Request IP Documentation

Access technical specifications, mask-adder metrics, and integration guides for our non-volatile memory IP solutions.

IP ACCESS
Integration Assets
Download standard cell models and integration scripts for your design flow.
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AEC-Q100 Ready
Zero Mask Adder
High Endurance
CMOS Optimized
ENTERPRISE
Technical Briefing
Schedule a deep-dive session with our engineering team for your specific node.
Support Level:Dedicated FAE

Includes custom layout review, yield analysis, and tape-out support for your specific silicon process.

NSCORE IP Pipeline: OPERATIONAL
Fukuoka, JapanContact: info@nscore.com+81-92-000-0000
Company Updates

Corporate News

Latest milestones, foundry partnerships, and technical breakthroughs from NSCore.

NVM IP

12nm

+0.84%

SRAM

28nm

+1.12%

OTP

180nm

-0.45%

MRAM

22nm

+0.02%